2. R. Narasimhan, L. P. Sadwick, and R. J. Hwu, "Enhancement of High-Temperature High-Frequency Performance of GaAs-based FETs by the High-Temperature Electronic Technique", accepted for publication, IEEE Transactions on Electron Devices.
3. J. C. Koniak, M. Sokolich, R. J. Hwu, and L. P. Sadwick, "The Effects of Substrate Bias Voltages on the I-V Characteristics of GaAs MESFET's at Elevated Temperatures", Accepted for publication, IEEE Transactions on Electron Devices.
4. X. Wang, and R. J. Hwu, "Theoretical Analysis and FDTD Simulation to the Nonlinear Transmission Line", accepted for publication, IEEE Transactions on Microwave Theory and Techniques.
5. X. Wang, R. J. Hwu, and G. Chen, "Piecewise Waveform Balance Analysis of Multitone Nonlinear Circuits", accepted for publication, IEEE Transactions on Circuits and Systems (CAS) .
6. J. Ren and R. J. Hwu, "Characterizations of Crystals in Quasi-Optical Circuits Using 3-D anisotropic FDTD Formulation and Floquent Boundary Condition", accepted for publication, Microwave and Optical Technology Letters, December 1998.
7. R. J. Hwu, R. W. Alm, and X.Wang, "Study of Bow-Tie Antennas and Bow-Tie Antenna Arrays on Electrically Thin Substrates", Microwave and Optical Technology Letters, Vol. 17, No. 6, pp. 359-368, April 1998.
8. P. P. Lee, R. J. Hwu, L. P. Sadwick, H. Balasubramaniam, B. R. Kumar, J. H. Chern, and R. L. Lareau, "Growth and Characterization of DyP/GaAs and DyAs/GaAs-Based Heterostructures and Superlattices", Physica E, Vol. 2, Nos. 1-4, pp. 358-362, 1998.
9. P. P. Lee, R. J. Hwu, L. P. Sadwick, H. Balasubramaniam, B. R. Kumar, R. Alvis, R. T. Lareau, and M. C. Wood, "Epitaxial Growth and Characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs Heterostructures", Journal of Electronic Materials, Vol. 27, No. 5, pp. 405-408, 1998.
10. P. P. Lee, R. J. Hwu, L. P. Sadwick, H. Balasubramaniam, B. R. Kumar, T. C. Lai, S. N. G. Chu, R. Alvis, R. T. Lareau, and M. C. Wood, "Molecular Beam Epitaxy Growth and Characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs Heterostructures, Journal of Vacuum Science and Technology B, Vol. 16, No. 3, pp. 1467-1470, 1998.
11. X. Wang and R. J. Hwu, "A New Source Formulation for FDTD Simulation of High-Frequency Integrated Circuits With and Without Ground Planes", Microwave and Optical Technology Letters, Vol. 14, No. 6, pp. 321-324, April, 1997.
12. X. Wang and R. J. Hwu, "FDTD Simulation of Ultrashort Pulse Generation Via Optoelectronics Switches", Microwave and Optical Technology Letters, Vol. 1214, No. 4, pp. 204-207, March 1997.
13. L. P. Sadwick, P. P. Lee, M. Patel, M. Nikols, R. J. Hwu, J. E. Shield, D. C. Streit, D. Brehmer, K. McCormick, S. J. Allen, and R. W. Gedridge, "Epitaxial Dysprosium Phosphide Grown by Gas-Source and Solid-Source MBE on Gallium Arsenide Substrates", Journal of Crystal Growth, Vol. 164, p. 285, 1996.
14. R. W. Alm and R. J. Hwu, "Determination of eeff for Printed Structures on Electrically Thin Substrates", Microwave Journal, Vol. 37, No. 9, pp. 116-122, September, 1994.
15. L. P. Sadwick, E. H. Reihlen, D. H. Jaw, R. J. Hwu, and D. C. Streit, "Observation of a 1.2 eV Defect Photoluminescence Peak in Heavily Planar Doped n-type GaAs Grown by Molecular Beam Epitaxy", Journal of Vacuum Science and Technology B, Vol. B(11), pp. 120-123, 1993.
16. R. J. Hwu, A. Djuandi, and S. C. Lee, "Negative Differential Resistance Frequency Conversion with Gain", IEEE Trans. on Microwave Theory and Techniques, Vol. 41, No. 5, pp. 890-893, May, 1993.
17. R. J. Hwu, "Recent Development of Millimeter-Wave High-Power Back-to-Back Varactor Diode Frequency Tripler", Invited Paper, Microwave Journal, Vol. 36, No. 5, pp. 240-253, May, 1993.
18. R. J. Hwu, "Comments on "Modeling of Planar Varactor Frequency Multiplier Devices with Blocking Barriers", IEEE Trans. on Microwave Theory and Techniques, Vol. 41, No. 2, pp. 361-362, February, 1993.
19. R. W. Alm and R. J. Hwu, "A Broadband E-Plane 180° Millimeter-Wave Balun", IEEE Microwave and Guided Wave Letters, Vol. 2, No. 11, pp. 253-255, November 1992.
20. R. J. Hwu and A. M. Abhyankar, "A New Method of Determination of the I-V Characteristics of Negative Differential Conductance Devices", IEEE Electron Device Letters, Vol. 13, No. 10, October 1992.
21. R. J. Hwu and L. P. Sadwick, "Limitations of the Back-to-Back Barrier-Intrinsic-N+ Diode Frequency Tripler", IEEE Trans. on Electron Devices, Vol. 39, No. 8, pp. 1805-1810, August 1992.
22. L. P. Sadwick, R. J. Hwu, D. C. Streit, W. L. Jones, K. L. Tan, J. R. Velebir, and H. C. Yen, "Measurement of Ultra-Abrupt Doping Transitions Using Capacitance Versus Voltage Techniques", Journal of Vacuum Science and Technology B, Vol. B(10), No. 1, pp. 468-473, January/February 1992.
23. L. P. Sadwick, D. C. Streit, W. L. Jones, C. W. Kim, and R. J. Hwu, "Device and Material Properties of Pseudomorphic HEMT Structures Subjected to Rapid Thermal Annealing", IEEE Trans. on Electron Devices, Vol. 39, No. 1, pp. 50-55, January 1992.
24. R. J. Hwu and L. P. Sadwick, "Design Criteria of the Near-Millimeter Wave Quasi-Optical Monolithic Diode-Grid Frequency-Multiplier Array", International J. Infrared and Millimeter Waves, Vol. 13 , No. 8, pp. 1145-1162, August 1992.
25. R. J. Hwu, L. P. Sadwick, and D. C. Streit, "Quasi-Optical Monolithic High Electron Mobility (HEM) Varactor Diode-Grid Frequency Tripler Arrays", International J. of Infrared and Millimeter Waves, Vol. 12, No. 12, pp. 1409-1423, December 1991.
26. R. J. Hwu and S. C. Kao, "Design Consideration of Monolithic Millimeter-Wave Barrier Varactor Diode Frequency Multiplier Arrays", International J. Infrared and Millimeter Waves, Vol. 12, No. 9, pp. 1087-1104, September 1991.
27. D. C. Streit, M. E. Hafizi, D. K. Umemoto, J. R. Velebir, L. T. Tran, A. K. Oki, M. E. Kim, S. K. Wang, C. W. Kim, L. P. Sadwick, and R. J. Hwu, "Effect of Exponentially-Graded Base Doping on the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors", IEEE Electron Device Letters, Vol. 12, No. 5, May 1991.
28. D. C. Streit, W. L. Jones, L. P. Sadwick, C. W. Kim, and R. J. Hwu, "Effect of Rapid Thermal Annealing on Planar-Doped Pseudomorphic InGaAs High Electron Mobility Transistor Structures", Applied Physics Letters, Vol. 58, No. 20, pp. 2273-2275, May 1991.
29. R. J. Hwu, N. C. Luhmann, Jr., and D. B. Rutledge, "Millimeter and Sub-Millimeter Wave Technology Developments for the Next Generation of Fusion Devices", Review Paper, Review of Scientific Instruments, Vol. 61, No. 10, pp. 3253-3255, October 1990.
30. R. J. Hwu, C. F. Jou, N. C. Luhmann, Jr., M. Kim, W. W. Lam, Z. B. Popovic, and D. B. Rutledge, "Array Concepts for Solid-State and Vacuum Microelectronics", Review Paper, IEEE Trans. on Electron Devices, Vol. 36, No. 11, November 1989.
31. R. J. Hwu, "Beam Focusing in the Semiconductor Directional Coupler with Saturated Gain", Journal of Applied Physics, Vol. 65, No. 12, pp. 4529-4531, June 1989.
32. R. J. Hwu, "Optical Switching in the Semiconductor Directional Coupler with Saturated Gain", Journal of Applied Physics, Vol. 65, No. 5, pp. 2137-2139, 1989.
33. R. J. Hwu, N. C. Luhmann, Jr., D. B. Rutledge, B. Hancock, and U. Lieneweg, "Monolithic Watt-Level Millimeter-Wave Diode-Grid Frequency Multiplier Array", International J. of Infrared and Millimeter Waves, Vol. 9, No. 12, pp. 1011-1020, December 1988.
34. R. J. Hwu, C. F. Jou, N. C. Luhmann, Jr., W. W. Lam, D. B. Rutledge, B. Hancock, U. Lieneweg, and J. Maserjian, "Watt-Level Millimeter-Wave Harmonic Multiplier Array Sources for Plasma Diagnostics", Review of Scientific Instruments, Vol. 59, No. 8, pp. 1577-1579, 1988.
.1. L. P. Sadwick, Y. J. Zhang, D. J. Schaeffer, D. G. Petelenz, R. J. Crofts, Y. H. Feng, R. J. Hwu, G. M. Sandquist and D. M. Slaughter, "High-Temperature, Radiation-Hard Electronic Technology", AIP Conference Proceedings 324, 12th Symposium on Space Nuclear Power and Propulsion, p 27, 1995.
2. L. P. Sadwick, R. J. Crofts, Y. H. Feng, M. Sokolich, and R. J. Hwu, "Low Leakage High Performance GaAs-Based High Temperature Electronics", Institute of Physics Conference Proceedings Series Number 141, Compound Semiconductors, p. 63, 1994.
3. R. J. Hwu, L. P. Sadwick, and J.-H. Chern, "High Temperature Performance of Ohmic Contacts to n-type GaN and GaAs", 1998 International Electron Devices and Materials Symposia (IEDMS), Tainan, Taiwan, R.O.C., December 1998.
4. B. R. Kumar, R. J. Hwu, and L. P. Sadwick, "Epitaxial Growth and Characterization of DyP/InP and DyAs/InP", 1998 International Electron Devices and Materials Symposia (IEDMS), Tainan, Taiwan, R.O.C., December 1998.
5. R. J. Hwu, J. Ren, and X. Wang, "FDTD Simulations for Quasi-Optical Active Circuit Arrays", Invited Talk, International Conference on Microwave and Millimeter Wave Technology, ICMMT'98, Beijing, China, August 18-20, 1998.
.6. J. Ren, X. Wang, and R. J. Hwu, "Characterizations of Crystals in Quasi-Optical Circuits Using 3-D Anisotropic FDTD Formulation and Floquent Boundary Condition", ANTEM'98, Ottawa, Ontario, Canada, August 9-12, 1998.
7. X. Wang, J. Ren, and R. J. Hwu, "Millimeter-Wave Nonlinear Transmission Line Tripler", 4th International Conference on Millimeter and Submillimeter Waves and Applications, San Diego, California, January 1998.
8. J. Ren, X. Wang, and R. J. Hwu, "FDTD Simulation of Quasi-Optical MESFET Oscillator Arrays", 4th International Conference on Millimeter and Submillimeter Waves and Applications, San Diego, California, January 1998.
9. J. Ren, X. Wang, and R. J. Hwu, "Nonlinear FDTD Analysis of Back-to-Back Varactor Diode Frequency Tripler", 4th International Conference on Millimeter and Submillimeter Waves and Applications, San Diego, California, January 1998.
10. L. V. Rozario, L. P. Sadwick, and R. J. Hwu, "SiC BGJFET Inverters for High Temperature/Power Applications", Fourth International High Temperature Electronics Conference, Albuquerque, New Mexico, June 1998.
11. J.-H. Chern, L. P. Sadwick, and R. J. Hwu, "High Temperature (400°C) Performance of Ohmic Contact to n-type GaN and GaAs", Fourth International High Temperature Electronics Conference, Albuquerque, New Mexico, June 1998.
12. P. P. Lee, L. P. Sadwick, R. J. Hwu, T. C. Lai, J. Y. Huang, X. Wang, B. R. Kumar, and H. Balasubramaniam, "High Temperature Characterization of MBE Grown DyP/GaAs and DyAs/GaAs", Fourth International High Temperature Electronics Conference, Albuquerque, New Mexico, June 1998.
13. L. V. Rozario, L. P. Sadwick, and R. J. Hwu, "Thermal Cycling Study of SiC BGJFETs", Fourth International High Temperature Electronics Conference, Albuquerque, New Mexico, June 1998.
14. P. P. Lee, J. H. Chern, L. P. Sadwick, R. J. Hwu, H. Balasubramaniam, B. R. Kumar, R. Alvis, R. L. Lareau, D. C. Streit, and T. Block, "Growth and Characterization of Rare-Earth Phosphide/Arsenide Schottky Contacts to GaAs", Material Research Society Spring Meeting, San Francisco, California, April 13-17, 1998.
15. W. Xu, X. Wang, W. Sui, and R. J. Hwu, "FDTD Simulations of Microcavity DBR Surface-Emitting Lasers", 1998 Optoelectronic Conference, San Jose, California, January 1998.
16. W. Xu, X. Wang, R. Gwynn, and R. J. Hwu, "Mode Analysis for Broad Area Semiconductor Lasers", 1998 Optoelectronic Conference, San Jose, California, January 1998.
17. X. Wang and R. J. Hwu, "Full-Wave Analysis of Picosecond Pulse Formation by GaAs Nonlinear Transmission Lines", Asia Pacific Microwave Conference, APMC'97, Hong Kong SAR, PRC, December 1997.
18. J. Ren, X. Wang, and R. J. Hwu, "FDTD Simulation of Quasi-Optical Device Grids", Asia Pacific Microwave Conference, APMC'97, Hong Kong SAR, PRC, December 1997.
19. L. V. Rozario, L. P. Sadwick, and R. J. Hwu, "6H-SiC MOS Structures for High Temperature Applications", 1997 International Semiconductor Device Research Symposium (ISDRS), Charlottesville, Virginia, December 1997.
20. L. V. Rozario, L. P. Sadwick, and R. J. Hwu, "SiC BGJFET Inverter for High Temperature Applications", 1997 International Semiconductor Device Research Symposium (ISDRS), Charlottesville, Virginia, December 1997.
21. L. V. Rozario, L. P. Sadwick, and R. J. Hwu, "Study of I-V Characteristics of 6H-SiC BGJFETs for High Temperature Applications", 1997 International Semiconductor Device Research Symposium (ISDRS), Charlottesville, Virginia, December 1997.
22. L. V. Rozario, L. P. Sadwick, and R. J. Hwu, "Thermal Cycling Study of SiC BGJFETs", 1997 International Semiconductor Device Research Symposium (ISDRS), Charlottesville, Virginia, December 1997.
23. P. P. Lee, R. J. Hwu, T.-C. Lai, J.-Y Huang, X. Wang, B. R. Kumar, H. Balasubramaniam, and L. P. Sadwick, "Characterization of DyP/GaAs Schottky Diodes for High Temperature and High Frequency Applications", 1997 International Semiconductor Device Research Symposium (ISDRS), Charlottesville, Virginia, December 1997.
24. J.-H. Chern, L. P. Sadwick, and R. J. Hwu, "Ohmic Contacts to n-GaN", 1997 International Semiconductor Device Research Symposium (ISDRS), Charlottesville, Virginia, December 1997.
25. R. J. Hwu, "High Power Microwave Electronics and Optoelectronics", Invited Talk, CAST 6th Annual Convention, New York, New York, October 25, 1997.
26. C. J. Sandquist, R. J. Hwu, and J. M. Worlock, "Binary Collimator", 6th Microoptics Conference and 14th Typical Meeting on Gradient-Index Optical Systems, Tokyo, Japan, October, 1997.
27. P. P. Lee, R. J. Hwu, L. P. Sadwick, H. Balasubramaniam, J. H. Chern, S. N. G. Chu, R. Alvis, R. T. Lareau, and M. C. Wood, "MBE Growth and Characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs Heterostructures", 16th North American Conference on Molecular Beam Epitaxy, Ann Arbor, Michigan, October 1997.
28. P. P. Lee, R. J. Hwu, L. P. Sadwick, H. Balasubramaniam, B. R. Kumar, T. C. Lai, S. N. G. Chu, R. T. Lareau, and M. C. Wood, "Structural and Electrical Characterization of Epitaxial DyP/GaAs and DyAs/GaAs Grown by MBE", 24th International Symposium on Compound Semiconductor, San Diego, California, 1997.
29. X. Wang and R. J. Hwu, "FDTD Simulation of Quasi-Optical Oscillator Arrays", 1997 IEEE/Connell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, New York, August 1997.
30. P. P. Lee, R. J. Hwu, L. P. Sadwick, J. H. Chern, B. R. Kumar, R. Alvis, T. Block, D. C. Streit, and R. L. Lareau, "Growth and Characterization of DyP/GaAs and DyAs/GaAs-Based Heterostructures and Superlattices", 8th International Conference on Semiconductor Modulated Structures, July 1997.
31. P. P. Lee, R. J. Hwu, L. P. Sadwick, H. Balasubramaniam, and R. Alvis, "Epitaxial Growth and Characterization of DyP/GaAs and GaAs/DyP/GaAs Heterostructures and Devices", Electronic Materials Conference, Ft. Collins, Colorado, June 1997.
32. W. Sui, J. L. Middleton, J. M. Worlock, and R. J. Hwu, "Experimental Study and Computer Simulation of Filamentation in Broad-Area Semiconductor Lasers", SPIE's International Symposia, Optoelectronics'97, San Jose, California, February 1997.
33. X. Wang and R. J. Hwu, "FDTD Simulation of Optoelectronic Switches", SPIE's International Symposia, Optoelectronics'97, San Jose, February 1997.
34. R. J. Hwu, L. P. Sadwick, P. P. Lee, M. Patel, H. Balasubramaniam, M. Nikols, R. T. Lareau, and D. C. Streit, "Epitaxial Dysprosium Phosphide/Gallium Arsenide Heterostructures and Devices", 1996 International Electron Devices and Materials Symposia (IEDMS), Hsinchu, Taiwan, R.O.C., December 1996.
35. S. H. Soh, M. D. Naidu, R. J. Hwu, and L. P. Sadwick, "Temperature Effects on TDDB of Static and Dynamic Stressing for Thin Oxides", 1996 International Electron Devices and Materials Symposia (IEDMS), Hsinchu, Taiwan, R.O.C., December 1996.
36. R. J. Hwu and L. P. Sadwick, Invited Talk, "Growth of Epitaxial Dysprosium Phosphide/Gallium Arsenide Heterostructures by MBE", MBE Conference, August 1996.
37. X. Wang and R. J. Hwu, "A New Source Formulation for FDTD Simulation of Microwave Integrated Circuits", ANTEM'96, Montreal, Canada, August 1996, pp. 807-810.
38. L. P. Sadwick, R. J. Hwu, M. Patel, P. P. Lee, M. Nikols, and H. Balasubramaniam, "Epitaxial Dysprosium Phosphide Contacts to Gallium Arsenide for High Temperature Applications", The 3rd High-Temperature Electronics Conference Proceedings, June 1996.
39. R. J. Hwu, L. P. Sadwick, P. P. Lee, H. Balasubramaniam, M. Nikols, M. Patel, R. T. Lareau, and D. C. Streit, "Epitaxial Dysprosium Phosphide/Gallium Arsenide Heterostructures and Devices", Electronic Materials Conference, June 1996.
40. L. P Sadwick, P. P. Lee, M. Patel, M. Nikols, R. J. Hwu, R. Alvis, R. W. Gedridge, Jr. and T. Groshens, "The Structure and Morphology of Epitaxial DyP on GaAs", TMS Annual Meeting, Anaheim, California, February 4-8, 1996.
41. L. P. Sadwick, Y. J. Zhang, B. Baker, R. Petersen, S. Johnson, D. G. Petelenz and R. J. Hwu, "Low Work Function Microminiature Thermionic Vacuum (MTV) Diodes", International Semiconductor Device Research Symposium (ISDRS), Charlottesville, Virginia, December 5-6, 1995.
42. R. J. Hwu, P. P. Lee, M. Patel, M. Nikols, J. E. Shield, D. C. Streit, D. Brehmeer, K. McCormick, S. J. Allen, and R. W. Gedridge, Jr., "Structural, Electrical and Optical Characterization of Single Crystal Dysprosium Phosphide (DyP) Grown on GaAs by MBE", International Semiconductor Device Research Symposium (ISDRS), Charlottesville, Virginia, December 5-6, 1995.
43. R. P. Rozario, R. Narasimhan, L. P. Sadwick, and R. J. Hwu, "Study of the Effects of High Temperature and Substrate Biasing on the D.C./High Frequency Characteristics of GaAs-Based Devices", International Semiconductor Device Research Symposium (ISDRS), Charlottesville, Virginia, December 5-6, 1995.
44. E. Russell, R. J. Hwu, L. P. Sadwick, N. A. Papanicolaou, "Evaluation of Silicon Ion Implant Damage in Epitaxial MBE-Grown GaAs from Room and High Temperature Capacitance-Voltage Measurements", International Semiconductor Device Research Symposium (ISDRS), Charlottesville, Virginia, December 5-6, 1995.
45. L. P. Sadwick, P. P. Lee, M. Patel, M. Nikols, R. J. Hwu, J. E. Shield, D. C. Streit, D. Brehmeer, K. McCormick, S. J. Allen, and R. W. Gedridge, Jr., "Epitaxial Dysprosium Phosphide Grown by Gas Source and Solid Source MBE on Gallium Arsenide Substrates", Fifth International Chemical Beam Epitaxy Conference, La Jolla, California, August 13-16, 1995.
46. L. P. Sadwick, Y. J. Zhang, T. H. Zhang, D. J. Schaeffer, D. G. Petelenz, and R. J. Hwu, "Emission Characteristics of Microminiature Thermionic Vacuum (MTV) Diodes", 8th International Vacuum Microelectronics Conference, Portland, Oregon, July 31-August 3, 1995.
47. R. Narasimhan, R. P. Rozario, L. P. Sadwick, and R. J. Hwu, "Improvement of the High Frequency Performance of Field Effect Transistors via Employing a Novel High-Temperature Technique", SPIE's 40th Annual Meeting, San Diego, California, July 10-12, 1995 .
48. L. P. Sadwick, Y. J. Zhang, D. J. Schaeffer, D. G. Petelenz, R. J. Crofts, Y. H. Feng, R. J. Hwu, and G. M. Sandquist, "High-Temperature, Radiation-Hard Electronic Technology", 12th Symposium on Space Nuclear Power and Propulsion, Albuquerque, New Mexico, January 8-12, 1995.
49. L. P. Sadwick, D. J. Schaeffer, Y. J. Zhang, D. G. Petelenz, R. J. Hwu, and G. M. Sandquist, "Progress in Microminiature Thermionic Vacuum Tube Devices", International Electron Devices Meeting (IEDM), San Francisco, California, December 11-14, 1994.
50. L. P. Sadwick, R. J. Crofts, Y. H. Feng, M. Sokolich, and R. J. Hwu, "Low Leakage, High Performance GaAs-Based High Temperature Electronics", 21st International Symposium on Compound Semiconductors, San Diego, California, September 20-23, 1994.
51. L. P. Sadwick, D. J. Schaeffer, Y. J. Zhang, D. G. Petelenz, and R. J. Hwu, "Experimental and Theoretical Investigations of Microminiature Thermionic Vacuum Tube Devices", International Electronic Devices and Material Symposium (IEDMS), Hsinchu, Taiwan, July 13-15, 1994.
52. R. Narasimhan, L. P. Sadwick, T. Ruttan, M. Sokolich, and R. J. Hwu, "High Temperature Studies of GaAs Microwave Devices", Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 5-10, 1994.
53. L. P. Sadwick, R. M. McDonald, R. J. Crofts, J. Koniak, M. Sokolich, and R. J. Hwu, "350 °C GaAs MESFET-Based Electronic Technology", Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 5-10, 1994.
54. L. P. Sadwick, Y. H. Feng, R. J. Crofts, R. J. Hwu, and M. Sokolich, "High Temperature GaAs MESFET Device and Circuit Modeling", Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 5-10, 1994.
55. R. J. Hwu, D. F. Santos, L. P. Sadwick, and M. Sokolich, "High Temperature Properties of Thin-Film Magnetoresistance Sensors", Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 5-10, 1994.
56. R. Heaton, R. Armstrong, R. J. Hwu, and L. P. Sadwick, "Substrate Damage in Ion Implanted GaAs by High Temperature Capacitance-Voltage Measurements", Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 5-10, 1994.
57. D. J. Schaeffer, R. J. Hwu, Y. J. Zhang, D. G. Petelenz, and L. P. Sadwick, "Vertical Structure Microminiature Thermionic Vacuum Tube Diodes", Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 5-10, 1994.
58. E. Russell, R. J. Hwu, L. P. Sadwick, and N. A. Papanicolaou, "Substrate Damage in Ion Implanted GaAs by High Temperature Capacitance-Voltage Measurements", Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 5-10, 1994.
59. L. P. Sadwick, Y. J. Zhang, S. G. Holmes, D. G. Petelenz, and R. J. Hwu, "Microminiature Thermionic Vacuum Tube Diodes", International Electron Devices Meeting (IEDM), Washington DC, Virginia, December 5-8, 1993.
60. R. J. Hwu and A. M. Abhyankar, "A New Method of Determination of the I-V Characteristics of Negative Differential Conductance Devices", 17th International Conference on Infrared and Millimeter Waves, Pasadena, California, December 14-18, 1992.
61. R. J. Hwu, A. Djuandi, and S. C. Lee, "Negative Differential Resistance Frequency Conversion with Gain", 17th International Conference on Infrared and Millimeter Waves, Pasadena, California, December 14-18, 1992.
62. R. J. Hwu, L. P. Sadwick, and S. C. Lee, "Comparison Between Single and Back-to-Back Varactor Diode Characteristics", 17th International Conference on Infrared and Millimeter Waves, Pasadena, California, December 14-18, 1992.
63. L. P. Sadwick, C. W. Kim, R. J. Hwu, K. L. Tan, and D. C. Streit, "Electrical Measurements on Schottky Diodes of MBE Grown N-Type and P-Type Al0.48In0.52As", International Electronic Devices and Material Symposium (IEDMS), Taipei, Taiwan, November 1-4, 1992.
64. R. J. Hwu and L. P. Sadwick, "Design Criteria of the Near-Millimeter Wave Quasi-Optical Monolithic Diode-Grid Frequency-Multiplier Array", International Conference on Millimeter-Wave and Far-Infrared Technology, Beijing, China, August 22-26, 1992.
65. R. J. Hwu, A. Djuandi and S. C. Lee, "Negative Differential Resistance Frequency Multiplier, Self-Oscillating Frequency Multiplier, and Harmonic Oscillator Arrays", International Semiconductor Device research Symposium (ISDRS), Charlottesville, Virginia, December 4-6, 1991.
66. R. J. Hwu and S. C. Kao, "Design Consideration of Monolithic Millimeter-Wave Diode-Grid Frequency Tripler Arrays", International Symposium on Recent Advances in Microwave Technology, ISRAMT'91, Reno, Nevada, August 18-21, 1991.
67. L. P. Sadwick, R. J. Hwu, D. C. Streit, W. L. Jones, K. L. Tan, and H. C. Yen, "Characterization of Uniform and Planar Doped HEMT Structures After RTA Exposure", Materials Research Society Meeting, Anaheim, California, April 29-May 3, 1991.
68. L. P. Sadwick, R. J. Hwu, D. C. Streit, K. L. Tan, H. C. Yen, and W. L. Jones, "Characterization of III-V MBE Grown Material Addressed to Device Reliability", Materials Research Society Meeting, Anaheim, California, April 29-May 3, 1991.
69. R. J. Hwu, L. P. Sadwick, and G. B. Stringfellow, "III-V Compound Semiconductor MIS Varactor Millimeter and Submillimeter Wave Frequency Multipliers", Second International Symposium on Space Terahertz Technology, Pasadena, California, February 26-28, 1991.
70. R. J. Hwu and N. C. Luhmann, Jr., "Quantum Well Diode Frequency Multiplier Study", Second International Symposium on Space Terahertz Technology, Pasadena, California, February 26-28, 1991.
71. R. J. Hwu and N. C. Luhmann, Jr., "Recent Development of Barrier-Intrinsic-N+ Diode Frequency Tripler", Second International Symposium on Space Terahertz Technology, Pasadena, California, February 26-28, 1991.
72. R. J. Hwu and N. C. Luhmann, Jr., "Study of Quantum Well Diode Frequency Multipliers", 15th International Conference on Infrared and Millimeter Waves, Orlando, Florida, December 10-14, 1990.
73. R. J. Hwu, X. H. Qin, W. S. Wu, L. B. Sjogren, and N. C. Luhmann, Jr., "Development of Monolithic Solid-State Diode-Grid Frequency Multiplier Arrays", 15th International Conference on Infrared and Millimeter Waves, Orlando, Florida, December 10-14, 1990.
74. L. B. Sjogren, N. C. Luhmann, Jr., R. J. Hwu, W. Wu, X. H. Qin, M. Kim, D. B. Rutledge, Z. Popovic, B. Weikle, W. W. Lam, B. Hancock, U. Lieneweg, and J. Maserjian, "Development of a Monolithic 94 GHz 360 Degree Quasi-Optical Phase Shifter", 15th International Conference on Infrared and Millimeter Waves, Orlando, Florida, December 10-14, 1990.
75. L. P. Sadwick, R. J. Hwu, D. C. Streit, W. L. Jones, K. L. Tan, J. R. Velebir, and H. C. Yen, "C-V and I-V Characterization of Planar Doped AlGaAs and InGaAs HEMT Structures", International Electronic Devices and Material Symposium (IEDMS), Hsinchu, Taiwan, November 14-16, 1990.
76. R. J. Hwu, C. W. Kim, L. P. Sadwick, D. C. Streit, J. Velebir, K. C. Tan, H. C. Yen, and W. L. Jones, "Device and Material Properties of Strained and Pseudomorphic HEMT Structures and Devices Subjected to Rapid Thermal Annealing", International Electronic Devices and Material Symposium (IEDMS), Hsinchu, Taiwan, November 14-16, 1990.
77. R. J. Hwu, T. Y. Wang, L. P. Sadwick, G. B. Stringfellow, and M Sokolich, "Electrical Properties of Schottky and Ohmic Contacts to Highly Insulating AlGaInP Structures", International Electronic Devices and Material Symposium (IEDMS), Hsinchu, Taiwan, November 14-16, 1990.
78. R. J. Hwu, N. C. Luhmann, Jr., and D. B. Rutledge, "Millimeter and Sub-Millimeter Wave Technology Developments for the Next Generation of Fusion Devices", Eighth Topical Conference on High Temperature Processing Diagnostics of the American Physical Society, Cambridge, Mass., May 6-10, 1990.
79. R. J. Hwu and I. Galin, "Harmonic Oscillation", Second International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, June 17-22, 1990.
80. D. C. Streit, J. R. Velebir, K. L. Tan, H. C. Yen, W. L. Jones, C. W. Kim, R. J. Hwu, and L. P. Sadwick, "Profile and Performance Degradation Due To Thermal Stress and Strain Relief in Pseudomorphic and Lattice-Matched HEMT Devices", Talk F5-4, Materials Research Society Meeting, San Francisco, California, April 16-21, 1990.
81. R. J. Hwu, N. C. Luhmann, Jr., L. Sjogren, X. H. Qin, W. Wu, D. B. Rutledge, B. Hancock, and U. Lieneweg, "Watt Level Quasi-Optical Monolithic Frequency Multiplier Development", First International Symposium on Space Terahertz Technology, Ann Arbor, Michigan, March 5-6, 1990.
82. R. J. Hwu, L. P. Sadwick, N. C. Luhmann, Jr., D. B. Rutledge, and M. Sokolich, "Monolithic Integration of Varactor Diodes on III-V Compound Semiconductors for Watt-Level Frequency Multiplication at Millimeter-Wave Region", Second International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, October 22-28, 1989.
83. R. J. Hwu, N. C. Luhmann, Jr., D. B. Rutledge, B. Hancock, and U. Lieneweg, "Microwave and Millimeter-Wave Frequency Multiplier Arrays", 14th International Conference on Infrared and Millimeter Waves, Wurzburg, West Germany, October 2-4, 1989.
84. R. J. Hwu, L. P. Sadwick, N. C. Luhmann, Jr., D. B. Rutledge, and M. Sokolich, "Theoretical and Experimental Investigation of Watt-Level Wafer Scale Integration Microwave and Millimeter-Wave GaAs and AlGaAs Frequency Multipliers", 47th Device Research Conference (DRC), Boston, Mass., June 18-21, 1989.
85. R. J. Hwu, L. P. Sadwick, N. C. Luhmann, Jr., D. B. Rutledge, and M. Sokolich, "Highly Efficient Frequency Triplers in the Millimeter Wave Region -- Incorporating a Back-to-Back Configuration of Two Varactor Diodes", International Conference on Millimeter-Wave and Far-Infrared Technology, Beijing, China, June 19-23, 1989.
86. R. J. Hwu, L. P. Sadwick, N. C. Luhmann, Jr., D. B. Rutledge, and M. Sokolich, "Quasi-Optical Watt-Level Monolithic Diode-Grid Frequency Tripler Arrays in the Millimeter-Wave Region", IEEE International MTT-S International Microwave Symposium, Long Beach, California, June 13-15, 1989.
87. R. J. Hwu, L. P. Sadwick, N. C. Luhmann, Jr., and D. B. Rutledge, "DC and Millimeter-Wave Performance of Watt-Level Barrier-Intrinsic-N+ Diode-Grid Frequency Multiplier Fabricated on III-V Compound Semiconductor", International Electron Device Meeting (IEDM), San Francisco, California, December 11-14, 1988.
88. R. J. Hwu, N. C. Luhmann, Jr., D. B. Rutledge, D. Streit, T. O'Neill, and U. Lieneweg, "Monolithic Watt-Level Millimeter-Wave Barrier-Intrinsic-N+ (BIN) Diode-Grid Frequency Tripler Array", 13th International Conference on Infrared and Millimeter Waves, Honolulu, Hawaii, December 5-9, 1988.
89. R. J. Hwu, "A Detailed Study of Optical Switching by Gain Saturation Induced Phase Shifts in Semiconductor Directional Couplers", Lasers and Electro-Optics Society Annual Meeting, Santa Clara, California, November 2-4, 1988.
90. R. J. Hwu, N. C. Luhmann, Jr., and D. B. Rutledge, "Monolithic Barrier-Intrinsic-N+ (BIN) Diode-Grid Frequency Tripler", Asia Pacific Microwave Conference, APMC'88, Beijing, China, October 26-28, 1988.
91. R. J. Hwu, L. P. Sadwick, N. C. Luhmann, Jr., D. B. Rutledge, B. Hancock, and U. Lieneweg, "The Barrier-Intrinsic-N+ Diode", International Electronic Devices and Material Symposium (IEDMS), Kaohsiung, Taiwan, August 29-31, 1988.
92. R. J. Hwu, C. F. Jou, N. C. Luhmann, Jr., D. B. Rutledge, W. W. Lam, B. Hancock, U. Lieneweg, and D. Streit, "Watt-Level Frequency Multiplication in the Near Millimeter-Wave Region", Solid-State Sources Workshop, Pasadena, California, August 16, 1988.
93. R. J. Hwu, N. C. Luhmann, Jr., C. F. Jou, M. Kim, Z. B. Popovic, D. B. Rutledge, and W. W. Lam, "Array Concepts for Solid-State and Vacuum Microelectronics Millimeter-Wave Generation", First International Vacuum Microelectronics Conference, Williamsburg, Virginia, June 13-15, 1988.
94. R. J. Hwu, C. F. Jou, W. W. Lam, U. Lieneweg, D. C. Streit, N. C. Luhmann, Jr., J. Maserjian, and D. B. Rutledge, "Watt-Level Millimeter-Wave Monolithic Diode-Grid Frequency Multipliers", IEEE MTT-S International Microwave Symposium, New York, New York, May 25-27, 1988.
95. R. J. Hwu, "Optical Switching and Beam Focusing in the Directional Coupler with Saturated Gain", Conference on Lasers and Electro-Optics (CLEO), Anaheim, California, April 25-29, 1988.
96. R. J. Hwu, C. F. Jou, N. C. Luhmann, Jr., W. W. Lam, D. B. Rutledge, B. Hancock, U. Lieneweg, and J. Maserjian, "Watt-Level Millimeter-Wave Harmonic Multiplier Array Sources for Plasma Diagnostics", 7th American Physical Society Topical Conference on High-Temperature Plasma Diagnostics, Napa, California, March 13-17, 1988.
97. A. Bindal, R. J. Hwu, and K. L. Wang, "Characterization and Simulation of Si Ion Implantation in GaAs", 170th Meeting of Electrochemical Society, San Diego, California, October 19-24, 1986.